Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRFB4110GPBF
- RS Stock No.:
- 865-5807
- Mfr. Part No.:
- IRFB4110GPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 2 units)*
£7.28
(exc. VAT)
£8.74
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- 20 left, ready to ship
- Final 214 unit(s) shipping from 21 October 2025
Units | Per unit | Per Tube* |
|---|---|---|
| 2 - 8 | £3.64 | £7.28 |
| 10 - 18 | £3.46 | £6.92 |
| 20 - 48 | £3.32 | £6.64 |
| 50 - 98 | £3.17 | £6.34 |
| 100 + | £2.55 | £5.10 |
*price indicative
- RS Stock No.:
- 865-5807
- Mfr. Part No.:
- IRFB4110GPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 180 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 370 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.51mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 370 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 16.51mm | ||
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