onsemi SuperFET II N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 FCH190N65F_F155

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
865-1293
Mfr. Part No.:
FCH190N65F_F155
Brand:
ON Semiconductor
Find similar products by selecting one or more attributes.
Select all

Brand

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

SuperFET II

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

208 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.82mm

Minimum Operating Temperature

-55 °C

Height

20.82mm