Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	37 A
	Maximum Drain Source Voltage	600 V
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	104 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	357 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Width	4.82mm
	Maximum Operating Temperature	+150 °C
	Length	15.87mm
	Typical Gate Charge @ Vgs	63 nC @ 10 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Series	SuperFET II
	Height	20.82mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 37 A
	Maximum Drain Source Voltage 600 V
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 104 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 357 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Width 4.82mm
	Maximum Operating Temperature +150 °C
	Length 15.87mm
	Typical Gate Charge @ Vgs 63 nC @ 10 V
	Number of Elements per Chip 1
	Transistor Material Si
	Series SuperFET II
	Height 20.82mm
	Minimum Operating Temperature -55 °C

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

N-Channel MOSFET, 37 A, 600 V, 3-Pin TO-247 onsemi FCH104N60

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor