onsemi PowerTrench N-Channel MOSFET, 21 A, 60 V, 3-Pin TO-220F FDPF320N06L
- RS Stock No.:
- 864-8600P
- Mfr. Part No.:
- FDPF320N06L
- Brand:
- onsemi
Subtotal 10 units (supplied in a tube)*
£18.23
(exc. VAT)
£21.88
(inc. VAT)
FREE delivery for orders over £50.00
- 860 unit(s) ready to ship
Units | Per unit |
---|---|
10 + | £1.823 |
*price indicative
- RS Stock No.:
- 864-8600P
- Mfr. Part No.:
- FDPF320N06L
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 21 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TO-220F | |
Series | PowerTrench | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 38 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 26 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.36mm | |
Transistor Material | Si | |
Width | 4.9mm | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 23.2 nC @ 10 V | |
Height | 16.07mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220F | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 38 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 26 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.36mm | ||
Transistor Material Si | ||
Width 4.9mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 23.2 nC @ 10 V | ||
Height 16.07mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.