N-Channel MOSFET, 192 A, 40 V, 8-Pin PQFN8 onsemi FDMS8320LDC
- RS Stock No.:
- 864-8405P
- Mfr. Part No.:
- FDMS8320LDC
- Brand:
- onsemi
Bulk discount available
Subtotal (2 reels of 5 units)**. Quantities below 150 on continuous strip
£25.80
(exc. VAT)
£31.00
(inc. VAT)
40 In stock - FREE next working day delivery available*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit |
|---|---|
| 10 - 95 | £2.188 |
| 100 - 245 | £1.754 |
| 250 - 495 | £1.658 |
| 500 + | £1.554 |
**price indicative
- RS Stock No.:
- 864-8405P
- Mfr. Part No.:
- FDMS8320LDC
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 192 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PQFN8 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 1.7 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 121 nC @ 10 V | |
| Width | 5.85mm | |
| Length | 5.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.05mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 192 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PQFN8 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.7 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 121 nC @ 10 V | ||
Width 5.85mm | ||
Length 5.1mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||