onsemi PowerTrench N-Channel MOSFET, 14 A, 40 V, 8-Pin Power 33 FDMC8327L
- RS Stock No.:
- 864-8203P
- Mfr. Part No.:
- FDMC8327L
- Brand:
- onsemi
Subtotal 5 units (supplied on a continuous strip)*
£3.49
(exc. VAT)
£4.19
(inc. VAT)
FREE delivery for orders over £50.00
- 10,900 unit(s) ready to ship
Units | Per unit |
---|---|
5 + | £0.698 |
*price indicative
- RS Stock No.:
- 864-8203P
- Mfr. Part No.:
- FDMC8327L
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 14 A | |
Maximum Drain Source Voltage | 40 V | |
Series | PowerTrench | |
Package Type | Power 33 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 14.5 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 30 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 3.3mm | |
Width | 3.3mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 18.5 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 0.75mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 40 V | ||
Series PowerTrench | ||
Package Type Power 33 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 14.5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 30 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 3.3mm | ||
Width 3.3mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 18.5 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.