N-Channel MOSFET, 240 A, 40 V, 8-Pin PSOF Fairchild FDBL9403_F085
- RS Stock No.:
- 864-8001
- Mfr. Part No.:
- FDBL9403_F085
- Brand:
- Fairchild Semiconductor
- RS Stock No.:
- 864-8001
- Mfr. Part No.:
- FDBL9403_F085
- Brand:
- Fairchild Semiconductor
Select all | Attribute | Value |
|---|---|---|
| Brand | Fairchild Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 240 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PSOF | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 1.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 357 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 9.9mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.48mm | |
| Typical Gate Charge @ Vgs | 144 nC @ 10 V | |
| Height | 2.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | PowerTrench | |
| Select all | ||
|---|---|---|
Brand Fairchild Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 240 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PSOF | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 357 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 9.9mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 10.48mm | ||
Typical Gate Charge @ Vgs 144 nC @ 10 V | ||
Height 2.4mm | ||
Minimum Operating Temperature -55 °C | ||
Series PowerTrench | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
