onsemi PowerTrench N-Channel MOSFET, 130 A, 150 V, 3-Pin D2PAK FDB075N15A
- RS Stock No.:
- 864-7966P
- Mfr. Part No.:
- FDB075N15A
- Brand:
- onsemi
Subtotal 20 units (supplied on a continuous strip)*
£74.00
(exc. VAT)
£88.80
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 252 unit(s) shipping from 06 October 2025
Units | Per unit |
---|---|
20 - 198 | £3.70 |
200 + | £3.21 |
*price indicative
- RS Stock No.:
- 864-7966P
- Mfr. Part No.:
- FDB075N15A
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 130 A | |
Maximum Drain Source Voltage | 150 V | |
Series | PowerTrench | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 7.5 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 333 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 9.65mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 77 nC @ 10 V | |
Length | 10.67mm | |
Minimum Operating Temperature | -55 °C | |
Height | 4.83mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 130 A | ||
Maximum Drain Source Voltage 150 V | ||
Series PowerTrench | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 333 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 9.65mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 77 nC @ 10 V | ||
Length 10.67mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.