N-Channel MOSFET, 35 A, 100 V, 3-Pin D2PAK Infineon IPB35N10S3L26ATMA1

Unavailable
RS will no longer stock this product.
RS Stock No.:
857-8671
Mfr. Part No.:
IPB35N10S3L26ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

26.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

9.45mm

Transistor Material

Si

Typical Gate Charge @ Vgs

30 nC @ 10 V

Length

10.31mm

Maximum Operating Temperature

+175 °C

Height

4.57mm

Minimum Operating Temperature

-55 °C

Series

OptiMOS T

RoHS Status: Exempt