Name: N-Channel MOSFET, 35 A, 100 V, 3-Pin D2PAK Infineon IPB35N10S3L26ATMA1
Brand: Infineon
SKU: 857-8671
Price: 0.71 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	35 A
	Maximum Drain Source Voltage	100 V
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	26.3 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.4V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	71 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	9.45mm
	Typical Gate Charge @ Vgs	30 nC @ 10 V
	Length	10.31mm
	Maximum Operating Temperature	+175 °C
	Height	4.57mm
	Series	OptiMOS T
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 35 A
	Maximum Drain Source Voltage 100 V
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 26.3 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.4V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 71 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Transistor Material Si
	Width 9.45mm
	Typical Gate Charge @ Vgs 30 nC @ 10 V
	Length 10.31mm
	Maximum Operating Temperature +175 °C
	Height 4.57mm
	Series OptiMOS T
	Minimum Operating Temperature -55 °C

RoHS Status: Exempt

N-Channel MOSFET, 35 A, 100 V, 3-Pin D2PAK Infineon IPB35N10S3L26ATMA1

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