N-Channel MOSFET, 4.4 A, 650 V, 3-Pin IPAK Infineon IPU60R950C6BKMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4.4 A

Maximum Drain Source Voltage

650 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

950 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Transistor Material

Si

Typical Gate Charge @ Vgs

13 nC @ 10 V

Width

2.41mm

Height

6.22mm

Series

CoolMOS C6

Minimum Operating Temperature

-55 °C