N-Channel MOSFET, 3.1 A, 550 V, 3-Pin DPAK Infineon IPD50R1K4CEBTMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

550 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Transistor Material

Si

Width

6.22mm

Height

2.41mm

Series

CoolMOS CE

Minimum Operating Temperature

-55 °C