Infineon HEXFET Dual N-Channel MOSFET, 3 A, 50 V, 8-Pin SOIC IRF7103TRPBF
- RS Stock No.:
- 831-2865P
- Mfr. Part No.:
- IRF7103TRPBF
- Brand:
- Infineon
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Subtotal 100 units (supplied on a continuous strip)*
£27.00
(exc. VAT)
£32.00
(inc. VAT)
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In Stock
- Plus 7,240 unit(s) shipping from 03 November 2025
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Units | Per unit |
|---|---|
| 100 - 180 | £0.27 |
| 200 - 480 | £0.25 |
| 500 - 980 | £0.234 |
| 1000 + | £0.218 |
*price indicative
- RS Stock No.:
- 831-2865P
- Mfr. Part No.:
- IRF7103TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 50 V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 200 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 50 V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Forward Diode Voltage 1.2V | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7103TRPBF
This MOSFET is designed for efficient performance across various applications. Its durable construction is particularly beneficial in circuits requiring effective power management, making it suitable for electrical and automation sectors. With a maximum drain-source voltage of 50V, it ensures reliable switching capabilities to meet application demands.
Features & Benefits
• Low Rds(on) of 200mΩ for improved efficiency
• Maximum continuous drain current of 3A enhances power handling
• Operational temperatures up to +150°C for increased reliability
• Wide gate threshold range of 1V to 3V for flexible control
• Dual isolated transistor configuration aids circuit integration
• Surface mount design simplifies PCB assembly and optimises space
• Maximum continuous drain current of 3A enhances power handling
• Operational temperatures up to +150°C for increased reliability
• Wide gate threshold range of 1V to 3V for flexible control
• Dual isolated transistor configuration aids circuit integration
• Surface mount design simplifies PCB assembly and optimises space
Applications
• Used in power supply designs for energy-efficient operation
• Integrated into motor drive for efficient motor control
• Employed in switching power supplies for improved performance
• Suitable for automation systems needing dependable switching components
• Integrated into motor drive for efficient motor control
• Employed in switching power supplies for improved performance
• Suitable for automation systems needing dependable switching components
What is the recommended operating temperature range for this component?
The component operates efficiently within a temperature range of -55°C to +150°C, ensuring reliability in various environments.
How does one determine the suitable gate voltage for optimal performance?
The acceptable gate-source voltage varies from -20V to +20V, providing flexibility in control circuit designs. For best results, operating near 10V is recommended, as indicated by typical gate charge specifications.
What safety precautions should be taken when using this device?
It is important to not exceed the voltage and current ratings during operation to avoid potential failure or damage. Moreover, appropriate heatsinking may be necessary to maintain optimal operating temperatures under heavy loads.
Can it be used in circuits requiring fast switching?
Yes, this MOSFET is designed for fast switching capabilities, making it well-suited for applications requiring high-speed performance, such as PWM control in motor drivers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
