Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK IRF540NSTRRPBF
- RS Stock No.:
- 831-2840P
- Mfr. Part No.:
- IRF540NSTRRPBF
- Brand:
- Infineon
Subtotal 10 units (supplied on a continuous strip)*
£9.68
(exc. VAT)
£11.62
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 850 unit(s) shipping from 04 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 + | £0.968 |
*price indicative
- RS Stock No.:
- 831-2840P
- Mfr. Part No.:
- IRF540NSTRRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 33 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 44 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 130 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 71 nC @ 10 V | |
| Width | 9.65mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 44 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 71 nC @ 10 V | ||
Width 9.65mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRRPBF
This N-channel power MOSFET is specifically designed for high-efficiency applications, delivering significant performance in various electronic systems. It excels in high-current environments, where reliability and low resistance are essential. Its enhancements make it particularly useful in industries focused on automation and power management.
Features & Benefits
• Low RDS(on) minimises power losses during operation
• Continuous drain current capability of 33A supports various applications
• Wide gate-source voltage range provides design flexibility
• Withstands high temperatures up to 175°C
• Fast switching improves overall circuit efficiency
• D2PAK surface mount design facilitates PCB integration
• Continuous drain current capability of 33A supports various applications
• Wide gate-source voltage range provides design flexibility
• Withstands high temperatures up to 175°C
• Fast switching improves overall circuit efficiency
• D2PAK surface mount design facilitates PCB integration
Applications
• Used in power management circuits for automation
• Commonly implemented in DC-DC converters for energy efficiency
• Suitable for motor drive that require high current
• Found in power supply modules for industrial electronics
• Appropriate for automotive due to robust thermal performance
• Commonly implemented in DC-DC converters for energy efficiency
• Suitable for motor drive that require high current
• Found in power supply modules for industrial electronics
• Appropriate for automotive due to robust thermal performance
What is the significance of low RDS(on) in operation?
Low RDS(on) reduces heat generation and enhances energy efficiency, which is crucial for extending component life and lowering operating expenses.
How does the MOSFET perform at higher temperatures?
It operates reliably up to 175°C, ensuring stability in extreme conditions while meeting performance demands without failure.
Can this device handle pulsed currents, and what are the specifications?
It supports pulsed drain currents up to 110A, effectively managing short bursts of high power, making it ideal for applications with fluctuating load conditions.
What are the implications of the specified gate threshold voltage?
The gate threshold voltage range of 2V to 4V indicates the voltage needed to start conduction, providing essential information for design integration in control circuits.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
