Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin D2PAK IRF5305STRLPBF
- RS Stock No.:
- 831-2834P
- Mfr. Part No.:
- IRF5305STRLPBF
- Brand:
- Infineon
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In Stock
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Units | Per unit |
|---|---|
| 50 - 90 | £0.804 |
| 100 - 240 | £0.753 |
| 250 - 490 | £0.702 |
| 500 + | £0.652 |
*price indicative
- RS Stock No.:
- 831-2834P
- Mfr. Part No.:
- IRF5305STRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 31 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 60 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 9.65mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 9.65mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
Forward Diode Voltage 1.3V | ||
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305STRLPBF
This P-channel MOSFET is tailored for high-efficiency applications, delivering reliability and performance. It employs enhancement mode functionality, making it versatile for various electronic circuits. With robust specifications, it serves as a suitable option for automation and power management in electrical and mechanical environments.
Features & Benefits
• Maximum continuous drain current of 31A
• Maximum drain source voltage of 55V
• Surface mount configuration for seamless integration
• Maximum power dissipation capability of 110W for efficient operation
• Enhanced thermal performance with a maximum operating temperature of +175°C
• Low on-resistance of 60mΩ for improved efficiency
• Maximum drain source voltage of 55V
• Surface mount configuration for seamless integration
• Maximum power dissipation capability of 110W for efficient operation
• Enhanced thermal performance with a maximum operating temperature of +175°C
• Low on-resistance of 60mΩ for improved efficiency
Applications
• For use with motor controls
• Suitable for power supply circuits
• Electronic switching
• Energy management solutions
• Suitable for power supply circuits
• Electronic switching
• Energy management solutions
What is the maximum gate threshold voltage?
The maximum gate threshold voltage is 4V, providing adequate control in circuit design.
How does the MOSFET handle heat?
It features a maximum power dissipation of 110W, enabling effective heat management in demanding applications.
Is this product compatible with surface mount designs?
Yes, it comes in a D2PAK package type designed specifically for surface mount applications.
What is the minimum operating temperature for functionality?
The device operates effectively at a minimum temperature of -55°C, ensuring versatility for various environments.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
