Infineon HEXFET N-Channel MOSFET, 89 A, 75 V, 3-Pin D2PAK IRF2807ZSTRLPBF
- RS Stock No.:
- 831-2806P
- Mfr. Part No.:
- IRF2807ZSTRLPBF
- Brand:
- Infineon
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Units | Per unit |
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- RS Stock No.:
- 831-2806P
- Mfr. Part No.:
- IRF2807ZSTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 89 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 170 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 9.65mm | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 71 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 89 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 170 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 9.65mm | ||
Length 10.67mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 71 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF2807ZSTRLPBF
This MOSFET is designed for high-performance switching applications, offering efficiency and reliability across various electronic circuits. Its low on-resistance and strong thermal characteristics make it essential for users in automation, electrical, and mechanical sectors, enabling effective power management and reduced energy loss.
Features & Benefits
• Continuous drain current up to 89A
• Maximum drain-source voltage of 75V
• Operating temperature up to +175°C for thermal stability
• Low Rds(on) of 9.4 mΩ to reduce power loss
• Quick switching abilities enhance system responsiveness
• Enhancement mode device for optimal operation
• Maximum drain-source voltage of 75V
• Operating temperature up to +175°C for thermal stability
• Low Rds(on) of 9.4 mΩ to reduce power loss
• Quick switching abilities enhance system responsiveness
• Enhancement mode device for optimal operation
Applications
• Used in power supply circuits for efficient energy conversion
• Employed in automotive and industrial systems for motor control
• Suitable for DC-DC converters and switching regulators
• Applicable in high-frequency switching in electronics
• Utilised for overload protection in various electrical systems
• Employed in automotive and industrial systems for motor control
• Suitable for DC-DC converters and switching regulators
• Applicable in high-frequency switching in electronics
• Utilised for overload protection in various electrical systems
What is the maximum gate-source voltage this component can handle?
It can manage a maximum gate-source voltage of ±20V, ensuring compatibility with diverse control signals.
How does this component perform under high temperatures?
With a maximum operating temperature of +175°C, it remains stable and functional in high-temperature environments, making it suitable for such applications.
What is the purpose of the low on-resistance feature?
The low on-resistance minimises heat generation and enhances efficiency during operation, which is important for high current applications.
Can it be used in both surface mount and through-hole designs?
This device is specifically designed for surface mount technology in a D2PAK package, optimising space and thermal performance.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
