Infineon HEXFET P-Channel MOSFET, 6.9 A, 20 V, 6-Pin TSOP-6 IRLTS2242TRPBF
- RS Stock No.:
- 830-3401
- Mfr. Part No.:
- IRLTS2242TRPBF
- Brand:
- Infineon
Subtotal (1 pack of 30 units)*
£7.74
(exc. VAT)
£9.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,840 unit(s) ready to ship
- Plus 999,993,150 unit(s) shipping from 10 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 30 + | £0.258 | £7.74 |
*price indicative
- RS Stock No.:
- 830-3401
- Mfr. Part No.:
- IRLTS2242TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 6.9 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | TSOP-6 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 55 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Typical Gate Charge @ Vgs | 12 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3mm | |
| Transistor Material | Si | |
| Width | 1.75mm | |
| Height | 1.3mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 6.9 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type TSOP-6 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 55 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Typical Gate Charge @ Vgs 12 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Transistor Material Si | ||
Width 1.75mm | ||
Height 1.3mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
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