Infineon HEXFET N-Channel MOSFET, 25 A, 55 V, 3-Pin DPAK IRLR3105TRPBF
- RS Stock No.:
- 830-3360P
- Mfr. Part No.:
- IRLR3105TRPBF
- Brand:
- Infineon
Subtotal 10 units (supplied on a continuous strip)*
£8.46
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£10.15
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In Stock
- 3,960 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 + | £0.846 |
*price indicative
- RS Stock No.:
- 830-3360P
- Mfr. Part No.:
- IRLR3105TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 43 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 57 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 20 nC @ 5 V | |
| Forward Diode Voltage | 1.3V | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 43 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 57 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 6.22mm | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 20 nC @ 5 V | ||
Forward Diode Voltage 1.3V | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 25A Maximum Continuous Drain Current, 57W Maximum Power Dissipation - IRLR3105TRPBF
This MOSFET is intended for high-performance applications where electrical power control is critical. It provides efficient switching and effective thermal management, functioning within a wide temperature range, thus making it an advantageous choice for professionals in automation, electronics, and electrical sectors.
Features & Benefits
• Improves efficiency with low Rds(on) for reduced power loss
• Supports a maximum continuous drain current of 25A
• Allows dual gate-source voltage levels for added flexibility
• Maintains thermal stability with a maximum operating temperature of +175°C
• Compact DPAK TO-252 package ensures straightforward surface mounting
• Designed for rapid switching speeds for enhanced performance
• Supports a maximum continuous drain current of 25A
• Allows dual gate-source voltage levels for added flexibility
• Maintains thermal stability with a maximum operating temperature of +175°C
• Compact DPAK TO-252 package ensures straightforward surface mounting
• Designed for rapid switching speeds for enhanced performance
Applications
• Controls motor drives in automation systems
• Utilised in power management circuits for energy efficiency
• Integrated into DC-DC converters for electronic devices
• Suitable for industrial equipment demanding high reliability
• Employed in battery management systems for optimal operation
• Utilised in power management circuits for energy efficiency
• Integrated into DC-DC converters for electronic devices
• Suitable for industrial equipment demanding high reliability
• Employed in battery management systems for optimal operation
What is the operating temperature range?
The operating temperature range is -55°C to +175°C, offering versatility across various environments.
How does it handle switching speed?
It is built for fast switching, ensuring high performance in applications necessitating quick on-off cycles.
What type of mounting does it support?
This device is designed for surface mount applications using vapour phase, infrared, or wave soldering techniques.
Can it be used in high-voltage applications?
Yes, it operates with a maximum drain-source voltage of 55V, making it apt for high-voltage circuits.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
