Infineon HEXFET N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK IRLR2905TRPBF
- RS Stock No.:
- 830-3357P
- Mfr. Part No.:
- IRLR2905TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 40 units (supplied on a continuous strip)*
£27.20
(exc. VAT)
£32.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,500 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 40 - 80 | £0.68 |
| 100 - 180 | £0.636 |
| 200 - 480 | £0.593 |
| 500 + | £0.549 |
*price indicative
- RS Stock No.:
- 830-3357P
- Mfr. Part No.:
- IRLR2905TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 42 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 40 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 48 nC @ 5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 42 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Width 6.22mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 48 nC @ 5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
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