Infineon HEXFET N-Channel MOSFET, 28 A, 55 V, 3-Pin DPAK IRLR2705TRPBF
- RS Stock No.:
- 830-3348P
- Mfr. Part No.:
- IRLR2705TRPBF
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 100 - 180 | £0.436 |
| 200 - 480 | £0.407 |
| 500 - 980 | £0.379 |
| 1000 + | £0.351 |
*price indicative
- RS Stock No.:
- 830-3348P
- Mfr. Part No.:
- IRLR2705TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 28 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 65 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 68 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Typical Gate Charge @ Vgs | 25 nC @ 5 V | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 28 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 65 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 68 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Typical Gate Charge @ Vgs 25 nC @ 5 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 28A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLR2705TRPBF
This MOSFET is engineered for outstanding performance across a range of electronic applications. Leveraging modern advancements in MOSFET technology, it plays a significant role in switching applications where efficiency and dependability are essential. Its distinct features make it an excellent option for automation and electrical systems that require high current handling and robust operation.
Features & Benefits
• High continuous drain current of 28A improves performance
• Maximum voltage rating of 55V boosts switching capabilities
• Low on-resistance of 65mΩ minimises energy loss
• Operates effectively at temperatures up to +175°C
• Designed for surface mounting in a DPAK TO-252 package for efficiency
• Single enhancement mode configuration facilitates circuit design
• Maximum voltage rating of 55V boosts switching capabilities
• Low on-resistance of 65mΩ minimises energy loss
• Operates effectively at temperatures up to +175°C
• Designed for surface mounting in a DPAK TO-252 package for efficiency
• Single enhancement mode configuration facilitates circuit design
Applications
• Suitable for power management in industrial automation
• Ideal for energy-efficient switching in power supplies
• Commonly utilised in motor control circuits
• Appropriate for use in DC-DC converters
• Ideal for energy-efficient switching in power supplies
• Commonly utilised in motor control circuits
• Appropriate for use in DC-DC converters
What is the maximum power dissipation for this component?
The maximum power dissipation is 68W, allowing for efficient heat management during operation.
How does the operating temperature range affect usage?
The device operates effectively between -55°C and +175°C, making it suitable for various environmental conditions.
Is there a specific installation method recommended for this MOSFET?
The device is designed for surface mounting using techniques like soldering to ensure reliable connections.
Can this MOSFET be used in parallel with others?
Yes, it can be used in parallel configurations, but proper thermal management is essential to prevent overheating.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
