Infineon HEXFET N-Channel MOSFET, 2.8 A, 55 V, 3-Pin SOT-223 IRLL014NTRPBF
- RS Stock No.:
- 830-3307P
- Mfr. Part No.:
- IRLL014NTRPBF
- Brand:
- Infineon
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Subtotal 125 units (supplied on a continuous strip)*
£43.25
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£51.875
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In Stock
- 3,350 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 125 - 225 | £0.346 |
| 250 - 600 | £0.324 |
| 625 - 1225 | £0.301 |
| 1250 + | £0.248 |
*price indicative
- RS Stock No.:
- 830-3307P
- Mfr. Part No.:
- IRLL014NTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.8 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | SOT-223 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 280 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.7mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 9.5 nC @ 10 V | |
| Length | 6.7mm | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1V | |
| Height | 1.739mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.8 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 280 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Maximum Operating Temperature +150 °C | ||
Width 3.7mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 9.5 nC @ 10 V | ||
Length 6.7mm | ||
Transistor Material Si | ||
Forward Diode Voltage 1V | ||
Height 1.739mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 2.8A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL014NTRPBF
This MOSFET from Infineon, part of the HEXFET family, is engineered for high performance in various electrical and electronic applications. As an N-channel device operating in enhancement mode, it plays a vital role in power management for devices that demand high reliability in challenging conditions. Advanced technologies are integrated to manage substantial electrical loads effectively while keeping a compact design.
Features & Benefits
• Maximum continuous drain current of 2.8A for dependable performance
• Wide voltage range up to 55V for diverse applications
• Low drain-source on-resistance of 280mΩ minimises power losses
• High thermal stability with a maximum operating temperature of +150°C
• Enhanced gate threshold voltage options to improve switching capabilities
• Designed for surface mount applications, aiding PCB integration
• Wide voltage range up to 55V for diverse applications
• Low drain-source on-resistance of 280mΩ minimises power losses
• High thermal stability with a maximum operating temperature of +150°C
• Enhanced gate threshold voltage options to improve switching capabilities
• Designed for surface mount applications, aiding PCB integration
Applications
• Utilised in automation systems for effective motor control
• Employed in power supply circuits for efficient voltage regulation
• Suitable for switching in electronic devices
• Integrated into battery management systems for optimised energy use
• Applicable in LED drivers to enhance control efficiency
• Employed in power supply circuits for efficient voltage regulation
• Suitable for switching in electronic devices
• Integrated into battery management systems for optimised energy use
• Applicable in LED drivers to enhance control efficiency
What is the recommended mounting technique for optimal performance?
Utilising surface mount techniques ensures improved thermal performance and space efficiency on printed circuit boards.
How should the maximum gate-source voltage be considered when designing circuits?
It is important to maintain the gate-source voltage within the specified limits of -16V to +16V to ensure device integrity and performance.
Can this component handle high temperatures in operational environments?
It is rated for operation in environments up to +150°C, making it suitable for high-temperature applications.
Is it compatible with low-voltage battery systems?
Yes, it can manage low-voltage applications while providing effective power control and switching efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
