Infineon HEXFET N-Channel MOSFET, 2.8 A, 55 V, 3-Pin SOT-223 IRLL014NTRPBF
- RS Stock No.:
- 830-3307P
- Mfr. Part No.:
- IRLL014NTRPBF
- Brand:
- Infineon
Subtotal 125 units (supplied on a continuous strip)*
£43.25
(exc. VAT)
£51.875
(inc. VAT)
FREE delivery for orders over £50.00
- 3,350 unit(s) ready to ship
Units | Per unit |
|---|---|
| 125 - 225 | £0.346 |
| 250 - 600 | £0.324 |
| 625 - 1225 | £0.301 |
| 1250 + | £0.248 |
*price indicative
- RS Stock No.:
- 830-3307P
- Mfr. Part No.:
- IRLL014NTRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.8 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | SOT-223 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 280 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.7mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 9.5 nC @ 10 V | |
| Length | 6.7mm | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1V | |
| Height | 1.739mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.8 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 280 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Maximum Operating Temperature +150 °C | ||
Width 3.7mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 9.5 nC @ 10 V | ||
Length 6.7mm | ||
Transistor Material Si | ||
Forward Diode Voltage 1V | ||
Height 1.739mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 55V, Infineon
Infineon HEXFET Series MOSFET, 2.8A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL014NTRPBF
Features & Benefits
• Wide voltage range up to 55V for diverse applications
• Low drain-source on-resistance of 280mΩ minimises power losses
• High thermal stability with a maximum operating temperature of +150°C
• Enhanced gate threshold voltage options to improve switching capabilities
• Designed for surface mount applications, aiding PCB integration
Applications
• Employed in power supply circuits for efficient voltage regulation
• Suitable for switching in electronic devices
• Integrated into battery management systems for optimised energy use
• Applicable in LED drivers to enhance control efficiency


