Infineon HEXFET N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 IRLL2705TRPBF
- RS Stock No.:
- 830-3304P
- Mfr. Part No.:
- IRLL2705TRPBF
- Brand:
- Infineon
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Subtotal 100 units (supplied on a continuous strip)*
£45.80
(exc. VAT)
£55.00
(inc. VAT)
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In Stock
- 600 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 100 - 180 | £0.458 |
| 200 - 480 | £0.428 |
| 500 - 980 | £0.399 |
| 1000 + | £0.369 |
*price indicative
- RS Stock No.:
- 830-3304P
- Mfr. Part No.:
- IRLL2705TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.2 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 65 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Transistor Material | Si | |
| Width | 3.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V | |
| Length | 6.7mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.739mm | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.2 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 65 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Transistor Material Si | ||
Width 3.7mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 32 nC @ 10 V | ||
Length 6.7mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.739mm | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 5.2A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL2705TRPBF
This high-performance MOSFET is designed for efficient power management across various applications. With an N-channel configuration, it provides excellent switching capabilities, making it suitable for tasks that require quick response and minimised energy loss. This component enhances the efficiency and reliability of electronic circuits, especially in automation and control systems.
Features & Benefits
• Maximum continuous drain current of 5.2A
• Drain-source voltage rating of 55V
• Low Rds(on) of 65mΩ for efficient operation
• Compact SOT-223 package for space-saving designs
• Drain-source voltage rating of 55V
• Low Rds(on) of 65mΩ for efficient operation
• Compact SOT-223 package for space-saving designs
Applications
• Ideal for power supply circuits
• Utilised in automotive power management systems
• Commonly employed for switching in high-frequency circuits
• Integrates well in power inverters for renewable energy systems
• Utilised in automotive power management systems
• Commonly employed for switching in high-frequency circuits
• Integrates well in power inverters for renewable energy systems
What is the maximum voltage this component can handle?
The product supports a maximum drain-source voltage of 55V, allowing for robust performance in various applications.
Can it operate at high temperatures?
Yes, it is rated for a maximum operating temperature of +150°C, ensuring reliability in challenging environments.
How does this component manage heat during operation?
With a maximum power dissipation of 2.1W, it effectively manages thermal performance, reducing the risk of overheating.
Is it compatible with standard PCB designs?
This component is suitable for surface mount technology, enabling easy integration into standard PCB layouts.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
