Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W,S1VF(S
- RS Stock No.:
- 827-6167P
- Mfr. Part No.:
- TK20N60W,S1VF(S
- Brand:
- Toshiba
Bulk discount available
Subtotal 20 units (supplied in a bag)*
£72.70
(exc. VAT)
£87.24
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2 unit(s), ready to ship
Units | Per unit |
|---|---|
| 20 - 38 | £3.635 |
| 40 - 72 | £3.195 |
| 74 - 148 | £3.02 |
| 150 + | £2.94 |
*price indicative
- RS Stock No.:
- 827-6167P
- Mfr. Part No.:
- TK20N60W,S1VF(S
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | TK | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 155 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Maximum Power Dissipation | 165 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 5.02mm | |
| Length | 15.94mm | |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 20.95mm | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Series TK | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 155 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Maximum Power Dissipation 165 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 5.02mm | ||
Length 15.94mm | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Transistor Material Si | ||
Height 20.95mm | ||
- COO (Country of Origin):
- CN
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