Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin DPAK TK12P60W,RVQ(S
- RS Stock No.:
- 827-6126P
- Mfr. Part No.:
- TK12P60W,RVQ(S
- Brand:
- Toshiba
Subtotal 4 units (supplied on a continuous strip)*
£6.30
(exc. VAT)
£7.56
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 1,552 unit(s) shipping from 10 November 2025
Units | Per unit |
|---|---|
| 4 + | £1.575 |
*price indicative
- RS Stock No.:
- 827-6126P
- Mfr. Part No.:
- TK12P60W,RVQ(S
- Brand:
- Toshiba
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11.5 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | TK | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 340 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Maximum Power Dissipation | 100 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V | |
| Length | 6.6mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 6.1mm | |
| Height | 2.3mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 11.5 A | ||
Maximum Drain Source Voltage 600 V | ||
Series TK | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 340 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 25 nC @ 10 V | ||
Length 6.6mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 6.1mm | ||
Height 2.3mm | ||
- COO (Country of Origin):
- CN
