N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220 Toshiba TK10E60W,S1VX(S

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Subtotal 4 units (supplied in a bag)*

£4.30

(exc. VAT)

£5.16

(inc. VAT)

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4 +£1.075

*price indicative

Packaging Options:
RS Stock No.:
827-6101P
Mfr. Part No.:
TK10E60W,S1VX(S
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Width

4.45mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Length

10.16mm

Maximum Operating Temperature

+150 °C

Series

TK

Height

15.1mm

COO (Country of Origin):
CN


MOSFET Transistors, Toshiba