N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON Infineon IPG20N06S2L35ATMA1

Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
827-5353
Mfr. Part No.:
IPG20N06S2L35ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

55 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

44 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

65 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.9mm

Length

5.15mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

18 nC @ 10 V

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Series

OptiMOS

Height

1mm

Infineon OptiMOS™ Dual Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.