P-Channel MOSFET, 13 A, 100 V, 3-Pin IPAK Infineon IRFU5410PBF

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

205 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Transistor Material

Si

Typical Gate Charge @ Vgs

58 nC @ 10 V

Width

2.39mm

Height

6.22mm

Minimum Operating Temperature

-55 °C

Series

HEXFET