Infineon HEXFET N-Channel MOSFET, 43 A, 60 V, 3-Pin D2PAK IRFS3806TRLPBF
- RS Stock No.:
- 827-4101P
- Mfr. Part No.:
- IRFS3806TRLPBF
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 50 - 90 | £0.842 |
| 100 - 240 | £0.806 |
| 250 - 490 | £0.771 |
| 500 + | £0.487 |
*price indicative
- RS Stock No.:
- 827-4101P
- Mfr. Part No.:
- IRFS3806TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 43 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 15.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 71 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Width | 9.65mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 43 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 15.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 71 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Width 9.65mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 43A Maximum Continuous Drain Current, 71W Maximum Power Dissipation - IRFS3806TRLPBF
This MOSFET is crafted for optimal performance in high-efficiency applications. Its enhancement mode configuration is pivotal in power management, driving significant usage across diverse electronic systems. It supports efficient switching and signal amplification, essential for sectors such as automation, electronics, and the electrical and mechanical industries.
Features & Benefits
• High continuous drain current capability of up to 43A
• Efficient operation with a maximum drain-source voltage of 60V
• Low on-resistance reduces power loss
• High-temperature application suitability with a range up to +175°C
• Space-saving surface mount design
• Enhanced ruggedness against dynamic stress for consistent performance
• Efficient operation with a maximum drain-source voltage of 60V
• Low on-resistance reduces power loss
• High-temperature application suitability with a range up to +175°C
• Space-saving surface mount design
• Enhanced ruggedness against dynamic stress for consistent performance
Applications
• Ideal for high-speed power switching scenarios
• Used in uninterruptible power supply systems
• Applicable in synchronous rectification within switched-mode power supplies
• Suitable for hard-switched and high-frequency circuits
• Used in uninterruptible power supply systems
• Applicable in synchronous rectification within switched-mode power supplies
• Suitable for hard-switched and high-frequency circuits
What is the maximum gate-to-source voltage?
The maximum gate-to-source voltage for this component is -20V to +20V, allowing flexibility in various circuit designs.
How does the on-resistance affect power dissipation?
Lower on-resistance minimises power dissipation during operation, leading to enhanced efficiency and thermal performance.
What is the typical gate charge required?
The typical gate charge at a gate-source voltage of 10V is 22nC, enabling quick switching transitions.
Is it compatible with surface mount PCB designs?
Yes, the surface mount design is suitable for modern PCB layouts, facilitating integration into compact electronic devices.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
