Infineon HEXFET N-Channel MOSFET, 9.4 A, 100 V, 3-Pin DPAK IRFR120NTRLPBF
- RS Stock No.:
- 827-4035P
- Mfr. Part No.:
- IRFR120NTRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 200 units (supplied on a reel)*
£93.40
(exc. VAT)
£112.00
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 360 unit(s), ready to ship
Units | Per unit |
|---|---|
| 200 - 480 | £0.467 |
| 500 - 980 | £0.437 |
| 1000 - 1980 | £0.407 |
| 2000 + | £0.377 |
*price indicative
- RS Stock No.:
- 827-4035P
- Mfr. Part No.:
- IRFR120NTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.4 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 210 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +175 °C | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.4 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 210 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Typical Gate Charge @ Vgs 25 nC @ 10 V | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
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