N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC Infineon IRFP250MPBF

RS Stock No.:: 827-4004P
Mfr. Part No.:: IRFP250MPBF
Brand:: Infineon

N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC Infineon IRFP250MPBF

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£47.00

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£56.50

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Units	Per unit
25 - 45	£1.616
50 - 120	£1.504
125 - 245	£1.392
250 +	£0.846

**price indicative

RS Stock No.:: 827-4004P
Mfr. Part No.:: IRFP250MPBF
Brand:: Infineon

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250MPBF

This N-channel MOSFET is designed for high performance and efficiency across a variety of applications. It offers a maximum continuous drain current of 30A and a drain-source voltage rating of 200V, making it suitable for tasks in the automation and electronics sectors. Its design ensures effective thermal performance, which enhances its use in electrical and mechanical industries.

Features & Benefits

• Dynamic dv/dt rating ensures stability during operation
• Enhanced thermal capabilities, with an operating temperature of up to 175°C
• Low on-resistance reduces power losses
• Fully avalanche-rated, providing over-voltage protection
• Simple drive requirements for easier integration into designs

Applications

• Suitable for high-frequency switching
• Ideal for power supplies and converters
• Applicable in motor control systems and industrial drives
• Utilised in renewable energy systems, such as solar inverters

How is thermal performance managed in demanding environments?

The thermal resistance characteristics are designed for efficient heat dissipation, allowing operation from -55°C to +175°C.

What are the implications of the low Rds(on)?

The low on-resistance results in lower power dissipation during conduction, enhancing overall system efficiency and reducing thermal stress on components.

Can this device be used for parallel configurations?

Yes, the design facilitates paralleling, increasing current capacity and improving thermal performance in high-power applications.

What should be considered when selecting the gate drive voltage?

A gate drive voltage between 2V and 4V is optimal for ensuring sufficient switching performance and preventing undesired operation.

What measures are in place for over-voltage protection?

The MOSFET is fully avalanche-rated, safeguarding against transient over-voltages and ensuring reliable operation in fluctuating conditions.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	200 V
Package Type	TO-247AC
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	75 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	214 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	5.2mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	123 nC @ 10 V
Length	16.13mm
Number of Elements per Chip	1
Transistor Material	Si
Forward Diode Voltage	1.3V
Height	21.1mm
Minimum Operating Temperature	-55 °C