N-Channel MOSFET, 4 A, 55 V, 3 + Tab-Pin SOT-223 Infineon IRFL024NTRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

55 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

18.3 nC @ 10 V

Number of Elements per Chip

1

Length

6.7mm

Transistor Material

Si

Width

3.7mm

Height

1.8mm

Minimum Operating Temperature

-55 °C

Series

HEXFET