Infineon HEXFET N-Channel MOSFET, 72 A, 100 V, 3-Pin TO-220AB FP IRFI4110GPBF
- RS Stock No.:
- 827-3962P
- Mfr. Part No.:
- IRFI4110GPBF
- Brand:
- Infineon
Subtotal 2 units (supplied in a tube)*
£7.26
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£8.72
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In Stock
- 2,050 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 2 + | £3.63 |
*price indicative
- RS Stock No.:
- 827-3962P
- Mfr. Part No.:
- IRFI4110GPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 72 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | TO-220AB FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 61 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 190 nC @ 10 V | |
| Length | 10.75mm | |
| Maximum Operating Temperature | +175 °C | |
| Height | 16.13mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 72 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type TO-220AB FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 61 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 190 nC @ 10 V | ||
Length 10.75mm | ||
Maximum Operating Temperature +175 °C | ||
Height 16.13mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 72A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IRFI4110GPBF
This n-channel MOSFET is designed for high-performance applications, providing efficient current handling and high voltage tolerance. It is essential in various electronic devices and ensures robust operation in challenging environments. Its performance in power switching and thermal management makes it a preferred component in the automation, electronics, and mechanical sectors.
Features & Benefits
• Continuous drain current capability of 72A
• Low Rds(on) resistance for enhanced operational efficiency
• Enhancement mode for effective performance
• Maximum drain-source voltage rating of 100V
• Excellent thermal management up to +175°C
• Improved avalanche ruggedness for added reliability
• Low Rds(on) resistance for enhanced operational efficiency
• Enhancement mode for effective performance
• Maximum drain-source voltage rating of 100V
• Excellent thermal management up to +175°C
• Improved avalanche ruggedness for added reliability
Applications
• Suitable for high-efficiency synchronous rectification
• Ideal for uninterruptible power supply systems
• Compatible with high-speed power switching
• Utilised in hard-switched and high-frequency circuits
• Ideal for uninterruptible power supply systems
• Compatible with high-speed power switching
• Utilised in hard-switched and high-frequency circuits
What is the maximum continuous drain current for your application?
The continuous drain current is rated at 72A under optimal conditions, making it suitable for demanding applications.
What is the significance of the gate threshold voltage?
The gate threshold voltage ranges from 2V to 4V, enabling precise control of the switching characteristics.
How does the MOSFET manage thermal performance?
It has a maximum operating temperature rating of +175°C, which supports durability in high-temperature environments.
What advantages does low Rds(on) offer in device performance?
Low Rds(on) decreases power losses during switching, leading to improved overall efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
