Infineon HEXFET N-Channel MOSFET, 43 A, 200 V, 3-Pin TO-220AB IRFB38N20DPBF
- RS Stock No.:
- 827-3944P
- Mfr. Part No.:
- IRFB38N20DPBF
- Brand:
- Infineon
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Subtotal 50 units (supplied in a tube)*
£104.00
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£125.00
(inc. VAT)
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In Stock
- 195 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 50 - 120 | £2.08 |
| 125 - 245 | £1.992 |
| 250 - 495 | £1.862 |
| 500 + | £1.752 |
*price indicative
- RS Stock No.:
- 827-3944P
- Mfr. Part No.:
- IRFB38N20DPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 43 A | |
| Maximum Drain Source Voltage | 200 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 54 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Width | 4.83mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.51mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 43 A | ||
Maximum Drain Source Voltage 200 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 54 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Width 4.83mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
Height 16.51mm | ||
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