Dual P-Channel MOSFET, 9.2 A, 30 V, 8-Pin SOIC Infineon IRF9358TRPBF

Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
827-3922
Mfr. Part No.:
IRF9358TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

9.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

23.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Typical Gate Charge @ Vgs

19 nC @ 4.5 V, 38 nC @ 15 V

Length

5mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Series

HEXFET

Height

1.5mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

P-Channel Power MOSFET 30V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.