Infineon HEXFET P-Channel MOSFET, 20 A, 30 V, 8-Pin SOIC IRF9310TRPBF
- RS Stock No.:
- 827-3912P
- Mfr. Part No.:
- IRF9310TRPBF
- Brand:
- Infineon
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Subtotal 100 units (supplied on a continuous strip)*
£83.00
(exc. VAT)
£100.00
(inc. VAT)
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In Stock
- Plus 3,560 unit(s) shipping from 10 November 2025
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Units | Per unit |
|---|---|
| 100 - 240 | £0.83 |
| 250 - 490 | £0.796 |
| 500 - 990 | £0.743 |
| 1000 + | £0.699 |
*price indicative
- RS Stock No.:
- 827-3912P
- Mfr. Part No.:
- IRF9310TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 6.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 110 nC @ 15 V, 58 nC @ 4.5 V | |
| Width | 4mm | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 6.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 110 nC @ 15 V, 58 nC @ 4.5 V | ||
Width 4mm | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
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