Infineon HEXFET N-Channel MOSFET, 18 A, 40 V, 8-Pin SOIC IRF7842TRPBF
- RS Stock No.:
- 827-3899P
- Mfr. Part No.:
- IRF7842TRPBF
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 50 - 90 | £1.026 |
| 100 - 240 | £0.983 |
| 250 - 490 | £0.918 |
| 500 + | £0.864 |
*price indicative
- RS Stock No.:
- 827-3899P
- Mfr. Part No.:
- IRF7842TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 5.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.25V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 4mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 33 nC @ 4.5 V | |
| Length | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.25V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 4mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 33 nC @ 4.5 V | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF7842TRPBF
This MOSFET delivers high performance in various electronic applications. With specifications including an 18A continuous drain current and a maximum drain-source voltage of 40V, it enhances power efficiency for electronic devices. Designed for surface mount technology, this device ensures durability and is suitable for professionals in electronics and automation.
Features & Benefits
• Low Rds(on) at 4.5V improves efficiency
• High current handling optimises power delivery
• Minimal gate charge reduces switching losses
• Avalanche rated to enhance reliability
• N-channel configuration supports effective performance in control applications
• High current handling optimises power delivery
• Minimal gate charge reduces switching losses
• Avalanche rated to enhance reliability
• N-channel configuration supports effective performance in control applications
Applications
• Used in synchronous MOSFET circuits for notebook processor power
• Acts as secondary synchronous rectification in isolated DC-DC converters
• Functions in non-isolated DC-DC converter designs
• Acts as secondary synchronous rectification in isolated DC-DC converters
• Functions in non-isolated DC-DC converter designs
What is the maximum operating temperature for this device?
It operates efficiently up to +150°C, ensuring reliability in high-temperature environments.
How does this component handle current during operation?
The device supports a continuous drain current of 18A, suitable for various applications.
Can it be used in high-voltage circuits?
Yes, the maximum drain-source voltage is rated at 40V, providing flexibility for high-voltage applications.
What are the thermal resistance characteristics?
The thermal resistance from junction-to-ambient is typically around 50-55°C/W, facilitating effective heat dissipation.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
