MPN

Diodes Inc Dual N-Channel MOSFET, 4.1 A, 60 V, 8-Pin SOIC DMN6070SSD-13

Subtotal 20 units (supplied on a continuous strip)*

£3.88

(exc. VAT)

£4.66

(inc. VAT)

In Stock

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
20 +	£0.194

*price indicative

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	N
	Maximum Continuous Drain Current	4.1 A
	Maximum Drain Source Voltage	60 V
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	100 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Maximum Power Dissipation	1.5 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	2
	Transistor Material	Si
	Width	3.95mm
	Length	4.95mm
	Typical Gate Charge @ Vgs	12.3 nC @ 10 V
	Height	1.5mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand DiodesZetex
	Channel Type N
	Maximum Continuous Drain Current 4.1 A
	Maximum Drain Source Voltage 60 V
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 100 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Maximum Power Dissipation 1.5 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 2
	Transistor Material Si
	Width 3.95mm
	Length 4.95mm
	Typical Gate Charge @ Vgs 12.3 nC @ 10 V
	Height 1.5mm
	Minimum Operating Temperature -55 °C

MOSFET Transistors, Diodes Inc.

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