Dual N/P-Channel MOSFET, 530 mA, 950 mA, 20 V, 6-Pin SOT-363 Infineon BSD235CH6327XTSA1

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RS Stock No.:
826-9513
Mfr. Part No.:
BSD235CH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N, P

Maximum Continuous Drain Current

530 mA, 950 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

500 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Length

2mm

Typical Gate Charge @ Vgs

0.34 nC @ 4.5 V, 0.4 nC @ 4.5 V

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Height

0.8mm

Series

OptiMOS 2

Minimum Operating Temperature

-55 °C

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Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.


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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.