Name: Dual N/P-Channel MOSFET, 530 mA, 950 mA, 20 V, 6-Pin SOT-363 Infineon BSD235CH6327XTSA1
Brand: Infineon
SKU: 826-9513
Price: 0.24 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N, P
	Maximum Continuous Drain Current	530 mA, 950 mA
	Maximum Drain Source Voltage	20 V
	Package Type	SOT-363 (SC-88)
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	600 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.2V
	Minimum Gate Threshold Voltage	0.6V
	Maximum Power Dissipation	500 mW
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-12 V, +12 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	2
	Typical Gate Charge @ Vgs	0.34 nC @ 4.5 V, 0.4 nC @ 4.5 V
	Length	2mm
	Width	1.25mm
	Transistor Material	Si
	Height	0.8mm
	Series	OptiMOS 2
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N, P
	Maximum Continuous Drain Current 530 mA, 950 mA
	Maximum Drain Source Voltage 20 V
	Package Type SOT-363 (SC-88)
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 600 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.2V
	Minimum Gate Threshold Voltage 0.6V
	Maximum Power Dissipation 500 mW
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -12 V, +12 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 2
	Typical Gate Charge @ Vgs 0.34 nC @ 4.5 V, 0.4 nC @ 4.5 V
	Length 2mm
	Width 1.25mm
	Transistor Material Si
	Height 0.8mm
	Series OptiMOS 2
	Minimum Operating Temperature -55 °C

Dual N/P-Channel MOSFET, 530 mA, 950 mA, 20 V, 6-Pin SOT-363 Infineon BSD235CH6327XTSA1

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