Infineon SIPMOS® N-Channel MOSFET, 280 mA, 240 V Depletion, 3-Pin SOT-223 BSP129H6906XTSA1

RS Stock No.:: 826-9434
Mfr. Part No.:: BSP129H6906XTSA1
Brand:: Infineon

Infineon SIPMOS® N-Channel MOSFET, 280 mA, 240 V Depletion, 3-Pin SOT-223 BSP129H6906XTSA1

Currently unavailable

We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.

RS Stock No.:: 826-9434
Mfr. Part No.:: BSP129H6906XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	280 mA
	Maximum Drain Source Voltage	240 V
	Series	SIPMOS®
	Package Type	SOT-223
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	6 Ω
	Channel Mode	Depletion
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	1.8 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Length	6.5mm
	Width	3.5mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	3.8 nC @ 5 V
	Minimum Operating Temperature	-55 °C
	Height	1.6mm
	Forward Diode Voltage	1.2V
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 280 mA
	Maximum Drain Source Voltage 240 V
	Series SIPMOS®
	Package Type SOT-223
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 6 Ω
	Channel Mode Depletion
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 1.8 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Length 6.5mm
	Width 3.5mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 3.8 nC @ 5 V
	Minimum Operating Temperature -55 °C
	Height 1.6mm
	Forward Diode Voltage 1.2V
	Automotive Standard AEC-Q101

Infineon SIPMOS® N-Channel MOSFETs

Infineon SIPMOS® Series MOSFET, 280 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP129H6906XTSA1

This small-signal transistor is an effective solution for devices that require high voltage and surface mount capability. As a depletion mode N-channel MOSFET, it enables efficient operation in various electronic applications. With a maximum drain-source voltage of 240V and a continuous drain current capacity of 280mA, this product is well-suited for automation and automotive applications, making it a dependable choice for managing power in different electronic circuits.

Features & Benefits

• N-channel configuration supports efficient switching operations
• Depletion mode functionality ensures constant current performance
• High voltage ratings provide versatility in applications
• Low gate threshold voltage enhances system compatibility
• Surface mount design allows for space-efficient installations
• AEC-Q101 qualified, suitable for automotive usage

Applications

• Suitable for automotive control systems
• Can be used in power management circuits
• Consumer electronics for enhanced efficiency

How can proper installation be ensured for optimal performance?

Install the MOSFET on the PCB following specified mounting guidelines, ensuring correct thermal management for effective heat dissipation.

What should be considered for thermal management during operation?

Thermal resistance must be monitored, as the operational temperature ranges from -55°C to +150°C, requiring adequate PCB design to facilitate efficient heat conduction.

What type of gate drive is recommended for this product?

A gate voltage within the specified range of ±20V is essential for optimal switching characteristics, ensuring dependable operation across applications.

Can this MOSFET be utilised in high-speed switching applications?

Yes, it is designed to function effectively in high-speed switching scenarios, thanks to specified turn-on and turn-off delay times.

What should be noted regarding gate charge characteristics?

The total gate charge at 5V is approximately 3.8nC, optimising power efficiency during switching without placing excessive load on the driving circuits.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.