Infineon OptiMOS T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK IPI80N06S4L05AKSA1
- RS Stock No.:
- 826-9342P
- Mfr. Part No.:
- IPI80N06S4L05AKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 100 units (supplied in a tube)*
£87.00
(exc. VAT)
£104.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 100 - 180 | £0.87 |
| 200 - 280 | £0.852 |
| 300 - 480 | £0.835 |
| 500 + | £0.765 |
*price indicative
- RS Stock No.:
- 826-9342P
- Mfr. Part No.:
- IPI80N06S4L05AKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | OptiMOS T2 | |
| Package Type | I2PAK (TO-262) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 107 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Length | 10mm | |
| Typical Gate Charge @ Vgs | 83 nC @ 10 V | |
| Width | 9.25mm | |
| Height | 4.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS T2 | ||
Package Type I2PAK (TO-262) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 107 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 10mm | ||
Typical Gate Charge @ Vgs 83 nC @ 10 V | ||
Width 9.25mm | ||
Height 4.4mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Exempt
Infineon OptiMOS™ T2 Power MOSFETs
Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
