N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK Infineon IPD30N06S215ATMA1

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
826-9197
Mfr. Part No.:
IPD30N06S215ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

55 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

14.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.5mm

Typical Gate Charge @ Vgs

41 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Height

2.3mm

Series

OptiMOS

Minimum Operating Temperature

-55 °C

RoHS Status: Exempt