Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK IPB80N06S4L05ATMA2
- RS Stock No.:
- 826-8998P
- Mfr. Part No.:
- IPB80N06S4L05ATMA2
- Brand:
- Infineon
Subtotal 20 units (supplied on a reel)*. Quantities below 150 on continuous strip
£11.08
(exc. VAT)
£13.30
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 660 unit(s), ready to ship
Units | Per unit |
|---|---|
| 20 + | £0.554 |
*price indicative
- RS Stock No.:
- 826-8998P
- Mfr. Part No.:
- IPB80N06S4L05ATMA2
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | OptiMOS™ -T2 | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 107 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Length | 10mm | |
| Typical Gate Charge @ Vgs | 83 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Width | 9.25mm | |
| Height | 4.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS™ -T2 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 107 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Length 10mm | ||
Typical Gate Charge @ Vgs 83 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 9.25mm | ||
Height 4.4mm | ||
Minimum Operating Temperature -55 °C | ||
