Infineon HEXFET Dual P-Channel MOSFET, 3.4 A, 55 V, 8-Pin SOIC IRF7342TRPBF
- RS Stock No.:
- 826-8901P
- Mfr. Part No.:
- IRF7342TRPBF
- Brand:
- Infineon
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Subtotal 100 units (supplied on a continuous strip)*
£62.40
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£74.90
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In Stock
- 2,140 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 100 - 240 | £0.624 |
| 250 - 490 | £0.584 |
| 500 - 990 | £0.544 |
| 1000 + | £0.504 |
*price indicative
- RS Stock No.:
- 826-8901P
- Mfr. Part No.:
- IRF7342TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.4 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 170 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 26 nC @ 10 V | |
| Width | 4mm | |
| Height | 1.5mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.4 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 170 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 26 nC @ 10 V | ||
Width 4mm | ||
Height 1.5mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 3.4A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7342TRPBF
This power MOSFET is intended for efficient power management in various electronic devices. Featuring a P-channel configuration, it is suitable for high-performance switching and amplification operations. Its robust specifications meet the essential requirements of engineers and designers in the automation and electrical sectors.
Features & Benefits
• Maximum continuous drain current of 3.4A
• Drain-source voltage tolerance of up to 55V
• Surface mount design allows for straightforward installations
• Low maximum drain-source resistance improves energy efficiency
• Gate threshold voltage of 1 V promotes dependable switching
• Drain-source voltage tolerance of up to 55V
• Surface mount design allows for straightforward installations
• Low maximum drain-source resistance improves energy efficiency
• Gate threshold voltage of 1 V promotes dependable switching
Applications
• Power management circuits for improved energy utilisation
• Automation equipment requiring robust switching capabilities
• Suitable for motor control systems
• Used in power converters for electronics
• Common in battery management systems
• Automation equipment requiring robust switching capabilities
• Suitable for motor control systems
• Used in power converters for electronics
• Common in battery management systems
What are the thermal limits for operation?
It operates effectively within a temperature range of -55°C to +150°C, ensuring reliability in various environments.
How does this component enhance circuit efficiency?
The low Rds(on) value reduces power loss during operation, thereby enhancing overall circuit efficiency.
Can this MOSFET handle pulsed currents?
Yes, it can accommodate pulsed drain currents of up to 27A, suitable for transient conditions.
What type of packaging is it available in?
It is available in an SO-8 surface mount package, optimising layout flexibility and manufacturing processes.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
