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Infineon HEXFET P-Channel MOSFET, 10.5 A, 40 V, 8-Pin SOIC IRF7240TRPBF

RS Stock No.:: 826-8835P
Mfr. Part No.:: IRF7240TRPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 10.5 A, 40 V, 8-Pin SOIC IRF7240TRPBF

Subtotal 10 units (supplied on a reel)*. Quantities below 150 on continuous strip

£7.30

(exc. VAT)

£8.80

(inc. VAT)

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In Stock

5,390 unit(s) ready to ship

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Units	Per unit
10 +	£0.73

*price indicative

RS Stock No.:: 826-8835P
Mfr. Part No.:: IRF7240TRPBF
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	10.5 A
	Maximum Drain Source Voltage	40 V
	Series	HEXFET
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	25 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	73 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Length	5mm
	Width	4mm
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	1.5mm
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 10.5 A
	Maximum Drain Source Voltage 40 V
	Series HEXFET
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 25 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 73 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Length 5mm
	Width 4mm
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 1.5mm
	Forward Diode Voltage 1.2V

Infineon HEXFET Series MOSFET, 10.5A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRF7240TRPBF

This P-Channel MOSFET excels in power management solutions. With a maximum continuous drain current of 10.5A and a drain-source voltage capability of 40V, it is designed for surface mounting in a compact SOIC package. Measuring 5mm in length, 4mm in width and 1.5mm in height, it is suitable for various electronic applications including battery management systems.

Features & Benefits

• Supports high current loads up to 10.5A, ideal for demanding tasks
• Operates effectively in enhancement mode for improved control
• Designed for thermal performance with a customised leadframe
• Suitable for multiple applications, saving on board space
• Compatible with standard soldering processes such as infrared and wave

Applications

• Utilised in battery management systems for monitoring performance
• Used in load management circuits requiring efficient power manipulation
• Suitable for automotive where space and efficiency are critical
• Integrated in power supplies for reliable load handling

What are the key thermal characteristics of this device?

The device features enhanced thermal characteristics due to its customised leadframe design, enabling it to operate comfortably within a junction temperature range of -55°C to +150°C.

How does the on-resistance impact overall performance?

With an exceptionally low Rds(on) of just 25mΩ, this MOSFET significantly reduces power losses during operation, enhancing the efficiency of power circuits and improving heat dissipation.

Can it be used in high-frequency applications?

Yes, the device's parameters, such as the typical gate charge of 73 nC at 10 V, allow for effective operation in high-frequency applications, making it suitable for various electronic devices.

What should be considered for optimal use in circuits?

It's essential to ensure that the gate-source voltage remains within the maximum limits of ±20V to prevent damage, thereby maintaining device reliability and performance in the application.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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