Infineon HEXFET P-Channel MOSFET, 10.5 A, 40 V, 8-Pin SOIC IRF7240TRPBF
- RS Stock No.:
- 826-8835P
- Mfr. Part No.:
- IRF7240TRPBF
- Brand:
- Infineon
Subtotal 10 units (supplied on a continuous strip)*
£7.30
(exc. VAT)
£8.80
(inc. VAT)
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In Stock
- 5,380 unit(s) ready to ship
- Plus 999,994,610 unit(s) shipping from 04 February 2026
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Units | Per unit |
|---|---|
| 10 + | £0.73 |
*price indicative
- RS Stock No.:
- 826-8835P
- Mfr. Part No.:
- IRF7240TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 10.5 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 25 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 73 nC @ 10 V | |
| Height | 1.5mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 10.5 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 25 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 73 nC @ 10 V | ||
Height 1.5mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Infineon HEXFET Series MOSFET, 10.5A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRF7240TRPBF
This P-Channel MOSFET excels in power management solutions. With a maximum continuous drain current of 10.5A and a drain-source voltage capability of 40V, it is designed for surface mounting in a compact SOIC package. Measuring 5mm in length, 4mm in width and 1.5mm in height, it is suitable for various electronic applications including battery management systems.
Features & Benefits
• Supports high current loads up to 10.5A, ideal for demanding tasks
• Operates effectively in enhancement mode for improved control
• Designed for thermal performance with a customised leadframe
• Suitable for multiple applications, saving on board space
• Compatible with standard soldering processes such as infrared and wave
• Operates effectively in enhancement mode for improved control
• Designed for thermal performance with a customised leadframe
• Suitable for multiple applications, saving on board space
• Compatible with standard soldering processes such as infrared and wave
Applications
• Utilised in battery management systems for monitoring performance
• Used in load management circuits requiring efficient power manipulation
• Suitable for automotive where space and efficiency are critical
• Integrated in power supplies for reliable load handling
• Used in load management circuits requiring efficient power manipulation
• Suitable for automotive where space and efficiency are critical
• Integrated in power supplies for reliable load handling
What are the key thermal characteristics of this device?
The device features enhanced thermal characteristics due to its customised leadframe design, enabling it to operate comfortably within a junction temperature range of -55°C to +150°C.
How does the on-resistance impact overall performance?
With an exceptionally low Rds(on) of just 25mΩ, this MOSFET significantly reduces power losses during operation, enhancing the efficiency of power circuits and improving heat dissipation.
Can it be used in high-frequency applications?
Yes, the device's parameters, such as the typical gate charge of 73 nC at 10 V, allow for effective operation in high-frequency applications, making it suitable for various electronic devices.
What should be considered for optimal use in circuits?
It's essential to ensure that the gate-source voltage remains within the maximum limits of ±20V to prevent damage, thereby maintaining device reliability and performance in the application.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
