N-Channel MOSFET, 130 mA, 60 V Depletion, 3-Pin SOT-23 Infineon BSS159NH6906XTSA1

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Subtotal 50 units (supplied on a continuous strip)*

£33.20

(exc. VAT)

£39.85

(inc. VAT)

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50 - 190£0.664
200 - 490£0.406
500 +£0.356

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Packaging Options:
RS Stock No.:
826-8254P
Mfr. Part No.:
BSS159NH6906XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

2.9mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

1.3mm

Typical Gate Charge @ Vgs

1.4 nC @ 5 V

Number of Elements per Chip

1

Height

1mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.