Texas Instruments NexFET N-Channel MOSFET, 110 A, 100 V, 8-Pin VSONP CSD19531Q5AT
- RS Stock No.:
- 823-9259P
- Mfr. Part No.:
- CSD19531Q5AT
- Brand:
- Texas Instruments
Subtotal 5 units (supplied on a continuous strip)*
£7.48
(exc. VAT)
£8.975
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,145 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 5 + | £1.496 |
*price indicative
- RS Stock No.:
- 823-9259P
- Mfr. Part No.:
- CSD19531Q5AT
- Brand:
- Texas Instruments
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 110 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | VSONP | |
| Series | NexFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 7.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.3V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.1mm | |
| Width | 5mm | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type VSONP | ||
Series NexFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 7.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.3V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.1mm | ||
Width 5mm | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
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