Infineon OptiMOS™ 3 N-Channel MOSFET, 34 A, 200 V, 3-Pin TO-220 IPP320N20N3GXKSA1
- RS Stock No.:
- 823-5642P
- Mfr. Part No.:
- IPP320N20N3GXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 100 units (supplied in a tube)*
£203.00
(exc. VAT)
£244.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 294 unit(s) shipping from 10 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 198 | £2.03 |
| 200 - 498 | £1.925 |
| 500 - 998 | £1.71 |
| 1000 + | £1.65 |
*price indicative
- RS Stock No.:
- 823-5642P
- Mfr. Part No.:
- IPP320N20N3GXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 34 A | |
| Maximum Drain Source Voltage | 200 V | |
| Series | OptiMOS™ 3 | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 32 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 136 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 4.57mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.36mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 15.95mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 34 A | ||
Maximum Drain Source Voltage 200 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 32 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 136 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 4.57mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 10.36mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 15.95mm | ||
- COO (Country of Origin):
- MY
Infineon OptiMOS™3 Power MOSFETs, 100V and over
Infineon OptiMOS™ 3 Series MOSFET, 34A Maximum Continuous Drain Current, 136W Maximum Power Dissipation - IPP320N20N3GXKSA1
This MOSFET offers high performance for various electronic applications. With continuous drain current capability of up to 34A and a drain-source voltage rating of 200V, it serves as an efficient power solution. The enhancement mode operation ensures dependable performance in circuits requiring switching and synchronous rectification.
Features & Benefits
• N-channel design for effective power conversion
• Low on-resistance reduces energy loss
• High operational temperature tolerance for extreme conditions
• Compatible with high-frequency switching applications
• Pb-free and RoHS compliant for environmentally friendly use
• Halogen-free materials enhance safety and compliance
• Low on-resistance reduces energy loss
• High operational temperature tolerance for extreme conditions
• Compatible with high-frequency switching applications
• Pb-free and RoHS compliant for environmentally friendly use
• Halogen-free materials enhance safety and compliance
Applications
• Used in power supplies for industrial automation
• Suitable for synchronous rectification in DC-DC converters
• Applicable in electric vehicle charging systems
• Ideal for battery management systems in consumer electronics
• Utilised in renewable energy inverters for efficient power transfer
• Suitable for synchronous rectification in DC-DC converters
• Applicable in electric vehicle charging systems
• Ideal for battery management systems in consumer electronics
• Utilised in renewable energy inverters for efficient power transfer
What is the maximum temperature range for operation?
The component operates effectively between -55°C and +175°C, making it suitable for diverse environmental conditions.
Can it manage high drain currents?
Yes, it supports continuous drain currents of up to 34A, suitable for high power applications.
What advantages does the low RDS(on) feature provide?
The low on-resistance significantly lowers energy losses during operation, enhancing efficiency in high-power switching applications.
Is it suitable for automotive applications?
With its high temperature rating and low on-resistance, it is appropriate for automotive applications, providing performance under challenging conditions.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
