N-Channel MOSFET, 5.1 A, 900 V, 3-Pin TO-220FP Infineon IPA90R1K2C3XKSA1

Subtotal 5 units (supplied in a tube)*

£2.77

(exc. VAT)

£3.325

(inc. VAT)

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Units
Per unit
5 +£0.554

*price indicative

Packaging Options:
RS Stock No.:
823-5605P
Mfr. Part No.:
IPA90R1K2C3XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

900 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.65mm

Width

4.85mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

16.15mm

Series

CoolMOS C3

Infineon CoolMOS™C3 Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.