Diodes Inc Quad N/P-Channel-Channel MOSFET, 1.8 A, 3.1 A, 30 V, 8-Pin SM ZXMHC3A01T8TA
- RS Stock No.:
- 823-1877P
- Mfr. Part No.:
- ZXMHC3A01T8TA
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 15 units (supplied on a continuous strip)*
£24.12
(exc. VAT)
£28.95
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 865 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 15 - 45 | £1.608 |
| 50 - 245 | £1.426 |
| 250 - 495 | £1.234 |
| 500 + | £1.072 |
*price indicative
- RS Stock No.:
- 823-1877P
- Mfr. Part No.:
- ZXMHC3A01T8TA
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 1.8 A, 3.1 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SM | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 180 mΩ, 330 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 1.7 W | |
| Transistor Configuration | Full Bridge | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 3.7mm | |
| Number of Elements per Chip | 4 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.7mm | |
| Typical Gate Charge @ Vgs | 3.9 nC @ 10 V, 5.2 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 1.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 1.8 A, 3.1 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SM | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 180 mΩ, 330 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 1.7 W | ||
Transistor Configuration Full Bridge | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.7mm | ||
Number of Elements per Chip 4 | ||
Maximum Operating Temperature +150 °C | ||
Length 6.7mm | ||
Typical Gate Charge @ Vgs 3.9 nC @ 10 V, 5.2 nC @ 10 V | ||
Transistor Material Si | ||
Height 1.6mm | ||
Minimum Operating Temperature -55 °C | ||
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.