Diodes Inc Dual N-Channel MOSFET, 8.6 A, 20 V, 8-Pin TSSOP DMN2016UTS-13
- RS Stock No.:
- 822-2542P
- Mfr. Part No.:
- DMN2016UTS-13
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 120 units (supplied on a continuous strip)*
£28.80
(exc. VAT)
£34.80
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 27 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 120 - 600 | £0.24 |
| 620 + | £0.228 |
*price indicative
- RS Stock No.:
- 822-2542P
- Mfr. Part No.:
- DMN2016UTS-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.6 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | TSSOP | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 16.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 880 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Number of Elements per Chip | 2 | |
| Width | 3.1mm | |
| Typical Gate Charge @ Vgs | 16.5 nC @ 4.5 V | |
| Length | 4.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 1.025mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.6 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type TSSOP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 16.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 880 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 2 | ||
Width 3.1mm | ||
Typical Gate Charge @ Vgs 16.5 nC @ 4.5 V | ||
Length 4.5mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 1.025mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.