Diodes Inc Dual N/P-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 DMG6602SVT-7

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Subtotal 600 units (supplied on a reel)*

£136.20

(exc. VAT)

£163.20

(inc. VAT)

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600 - 1400£0.227
1500 +£0.222

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Packaging Options:
RS Stock No.:
822-2532P
Mfr. Part No.:
DMG6602SVT-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

N, P

Maximum Continuous Drain Current

2.1 A, 3.4 A

Maximum Drain Source Voltage

30 V

Package Type

TSOT-26

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

100 mΩ, 140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.27 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.6mm

Transistor Material

Si

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

7 nC @ 10 V, 9 nC @ 10 V

Length

2.9mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.9mm

COO (Country of Origin):
CN

Dual N/P-Channel MOSFET, Diodes Inc.



MOSFET Transistors, Diodes Inc.